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Information Name: | Bose closure Switching Diodes | Switching Diodes | technetium diode-known brands |
Published: | 2014-11-15 |
Validity: | 0 |
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Detailed Product Description: | Schottky diode is its inventor Walter? Dr. Xiao Teji named. Schottky diode structure diagram (Schottky Barrier Diode, abbreviated as SBD) for short. SBD instead of using P-type semiconductor and N type semiconductor forming a PN junction principle of making contact, but the use of a metal forming a metal-semiconductor contact - the principle of making a semiconductor junction. Therefore, SBD is also referred to as metal - semiconductor (contact) surface barrier diode or a diode, which is a hot carrier diode. Schottky diode is the advent of the low-power, high current, ultra high-speed semiconductor devices. Reverse recovery time is very short (as small as a few nanoseconds), the forward voltage drop is only 0.4V, while the rectified current, but can reach several thousand mA. These excellent characteristics are fast recovery diode is unmatched. Medium and small power Schottky rectifier diodes are mostly used leaded and surface mount (SMD) packages. Tc Electronic Technology Co., Ltd. Guangdong solid professional production and sales of Schottky diodes twenty years, the current is divided into 1A, 2A, 3A, 5A, 8A, 10A, 15A, 20A, 30A, 45A, and is widely used in various types of power consumer electronics products. Switching diodes. There are common PN junction diode switching diode, PIN diodes and Schottky barrier diode, mainly used in computer, a variety of automatic control systems and microwave circuits. Switching diode switching time is mainly determined by the on-state to the off state of the transition time, this time is also called the reverse recovery time. From the start of play when reverse biased reverse current drops to 1/10 of the time required for the initial value is called the reverse recovery time. When the PN-state switching diode in the hole injection from the P region to the N-region, the formation of a forward pass conduction current, namely N-state area when there is always a certain minority carrier storage. Plus after the reverse bias, only total exclusion zone N stored minority carriers plug-switching diodes, diode to the OFF state. PN switching diode reverse recovery time is mainly minority carrier storage time required is determined by the exclusion of N area. Incorporation of gold in the silicon PN junction diode as a recombination center can be reduced non-equilibrium minority carrier lifetime of the patch switching diode, thereby reducing the reverse recovery time, improve the switching speed. Guangdong Electronic Technology Co., Ltd. specializes technetium production and sales of more than two decades switching diode switching diode LL4148, the current switching diode 4148 into glass seal and plastic, the main package there: LL-34 (SOD-80 / MiniMELF) switching diodes, DO- 34, DO-35, SOD-123, SOD-323, SOD-523, SOT-23, SOT-323, etc ...... glass sealed Switching Diodes | Switching Diodes | Diodes known brands to provide solid technetium Tc from Guangdong Electronic Technology Co., Ltd. . Guangdong Electronic Technology Co., technetium (www.goodark.asia) strong, credible, in Dongguan, Guangdong diode industry has accumulated a large number of loyal customers. The company better work attitude and constantly improving innovative ideas will lead technetium technology and you hand into the brilliant, for a better future! |
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Copyright © GuangDong ICP No. 10089450, Guangdong Electronic Technology Co., technetium All rights reserved.
Technical support: ShenZhen AllWays Technology Development Co., Ltd.
AllSources Network's Disclaimer: The legitimacy of the enterprise information does not undertake any guarantee responsibility